Product Description
Product Details
Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
● Logic-Level Gate Drive
● Surface Mount (IRLR024N)
● Straight Lead (IRLU024N)
● Advanced Process Technology
● Fast Switching
● Fully Avalanche Rated
| ANSC PART# | ANSC- IRLU024N |
| Part# | IRLU024N |
| Type： | / |
| Manufactor | Original |
| DC | new |
Specifications
Categories | Transistors - FETs, MOSFETs - Single |
Manufacturer | Infineon Technologies |
Series | HEXFET? |
Packaging | Tube |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
Vgs(th) (Max) @ Id | 2V @ 250?A |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 5V |
Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 480pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 45W (Tc) |
Rds On (Max) @ Id, Vgs | 65 mOhm @ 10A, 10V |
Operating-Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Payment&Transportation
Official Certificate&Certificate
Standard packaging
Multiple product supply
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