Mount   

Surface Mount

Mounting Type   

Surface Mount

Package / Case   

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Surface Mount   

YES

Supplier Device Package   

TO-263 (IXTA)

Number of Terminals   

2

Transistor Element Material   

SILICON

Mounting Style   

SMD/SMT

Power Dissipation (Max)  

360W (Tc)

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 175 C

Minimum Operating Temperature  

- 55 C

Channel Mode  

Enhancement

Manufacturer  

IXYS

Brand  

IXYS

Tradename  

PolarHT

Package  

Tube

Base Product Number  

IXTA50

Mfr  

IXYS

Product Status  

Active

Package Shape  

RECTANGULAR

Operating Temperature   

-55°C~175°C TJ

Packaging   

Tube

Series   

PolarHT™

Published   

2008

JESD-609 Code   

e3

Pbfree Code   

yes

Part Status   

Active

Moisture Sensitivity Level (MSL)   

1 (Unlimited)

Number of Terminations   

2

ECCN Code   

EAR99

Type   

PolarHT Power MOSFET

Terminal Finish   

Matte Tin (Sn)

Additional Feature   

AVALANCHE RATED

Terminal Position   

SINGLE

Terminal Form   

GULL WING

Peak Reflow Temperature (Cel)   

NOT SPECIFIED

Reach Compliance Code   

not_compliant

Time@Peak Reflow Temperature-Max (s)   

NOT SPECIFIED

Pin Count   

4

JESD-30 Code   

R-PSSO-G2

Qualification Status   

Not Qualified

Number of Elements   

1

Configuration   

Single

Number of Channels   

1 Channel

Power Dissipation-Max   

360W Tc

Element Configuration   

Single

Operating Mode   

ENHANCEMENT MODE

Power Dissipation   

360W

Case Connection   

DRAIN

FET Type   

N-Channel

Transistor Application   

SWITCHING

Rds On (Max) @ Id, Vgs   

60m Ω @ 50A, 10V

Vgs(th) (Max) @ Id   

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds   

2720pF @ 25V

Current - Continuous Drain (Id) @ 25°C   

50A Tc

Gate Charge (Qg) (Max) @ Vgs   

70nC @ 10V

Rise Time   

35ns

Drain to Source Voltage (Vdss)   

200V

Drive Voltage (Max Rds On,Min Rds On)   

10V

Vgs (Max)   

±20V

Polarity/Channel Type   

N-CHANNEL

Fall Time (Typ)   

30 ns

Product Type   

MOSFET

Transistor Type   

1 N-Channel

Turn-Off Delay Time   

70 ns

Continuous Drain Current (ID)   

50A

JEDEC-95 Code   

TO-263AB

Gate to Source Voltage (Vgs)   

20V

Drain Current-Max (Abs) (ID)   

50 A

Drain-source On Resistance-Max   

0.06Ohm

Drain to Source Breakdown Voltage   

200V

Pulsed Drain Current-Max (IDM)   

120A

DS Breakdown Voltage-Min   

200 V

Avalanche Energy Rating (Eas)   

1000 mJ

FET Technology   

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)   

360 W

FET Feature   

--

Product Category   

MOSFET

Width   

10.41 mm

Height   

4.83 mm

Length   

9.65 mm

RoHS Status   

ROHS3 Compliant