Product Details
Applications
• High frequency DC-DC converters
• UPS and Motor Control
Benefits
• Low Gate-to-Drain Charge to Reduce Switching Losses
• Fully Characterized Capacitance Including Effective Coss to Simplify Design, (See App. Note AN1001)
• Fully Characterized Avalanche Voltage and Current
• Typical RDS(on)= 12mΩ
Product Description
| Attribute | Attribute Value |
| Part# | IRF8010 |
| Manufacturer | / |
| Part Package | TO-220AB |
| Package Description | TO-220AB, 3 PIN |
| Pin Count | 3 |
| Avalanche Energy Rating (Eas) | 310 mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100 V |
| Drain Current-Max (ID) | 75 A |
| Drain-source On Resistance-Max | 0.015 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 °C |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 260 W |
| Pulsed Drain Current-Max (IDM) | 320 A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | TIN LEAD |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Actual image of the product
