Product Descriptions
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Product Features
rDS(ON) = 11.5mΩ, VGS = 10V, ID = 35A
rDS(ON) = 15mΩ, VGS = 4.5V, ID = 35A
High performance trench technology for extremely low rDS(ON)
Low gate charge
High power and current handling capability
RoHS Complicant
Product Applications
DC/DC converters
Specifications
| Attribute | Attribute value |
| Model | FDD8882 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | onsemi |
| Series | PowerTrench® |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Digi-Reel® | |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 12.6A (Ta), 55A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Vgs (Max) | 卤20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1260 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | FDD888 |
Actual product photos
Payment&Transportation
Official Certificate&Certificate
Multiple product supply
Company office environment
Warehouse Real Shot
Standard packaging
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