Product Details
2STR2160 Product details
Description
The device in a PNP transistor manufactured using new “PB-HCD”
(power bipolar high current density) technology. The resulting transistor shows
exceptional high gain performances coupled with very low saturation voltage.
The complementary NPN is the 2STR1160.
Features
■ Very low collector-emitter saturation voltage
■ High current gain characteristic
■ Fast switching speed
■ Miniature SOT-23 plastic package for surface mounting circuits
Applications
■ LED
■ Battery charger
■ Motor and relay driver
■ Voltage regulation
Product Description
ANSC PART# | ANSC- 2STR2160 |
Part# | 2STR2160 |
Type： | Electronic components |
Manufactor | STM |
DC | new |
Product Attributes
TYPE | DESCRIPTION |
|---|---|
Category | Discrete Semiconductor Products Transistors Bipolar (BJT) Single Bipolar Transistors |
Mfr | STMicroelectronics |
Series | - |
Packaging | Tape & Reel (TR) Cut Tape (CT) |
Part Status | Active |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 1 A |
Voltage - Collector Emitter Breakdown (Max) | 60 V |
Vce Saturation (Max) @ Ib, Ic | 480mV @ 100mA, 1A |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 500mA, 2V |
Power - Max | 500 mW |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 |
Base Product Number | 2STR2160 |
Actual image of the product
Product datasheet
For more information, please download
Payment&Transportation
Official Certificate&Certificate
Standard packaging
Multiple product supply
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