Product Details
Description
The device in a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
The complementary NPN is the 2STR1160.
Features
■ Very low collector-emitter saturation voltage
■ High current gain characteristic
■ Fast switching speed
■ Miniature SOT-23 plastic package for surface mounting circuits
Applications
■ LED
■ Battery charger
■ Motor and relay driver
■ Voltage regulation
Product Description
| Type# | Description |
| ANSC PART# | ANSC-2STR2160 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| Bipolar (BJT) | |
| Single Bipolar Transistors | |
| Mfr | / |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| / | |
| Part Status | Active |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 480mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 500mA, 2V |
| Power - Max | 500 mW |
| Frequency - Transition | - |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| Base Product Number | 2STR |
Actual image of the product
Product datasheet
For more information, please download
Payment&Transportation
Official Certificate&Certificate
Standard packaging
Multiple product supply
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