| Part# | NCE1012E |
| Type： | high-voltage N-channel IGBT field-effect transistor |
| Manufactor | / |
| DC | NEW |
| Describe | SOT523 |
| Supplier Device Packaging | REEL |
| Technology | Trench |
| Polarity | N |
| BVDSS(V) | 20 |
| ID(A) | 0.6 |
| VTH(V) | 0.75 |
| RDS(ON)@4.5VTyp(mΩ) | 210 |
| QG(nC) | 60 |
| PD(W) | 1 |
| PKG | / |
