| NCE30NP4030G | NCEP18N10AK |
| Type： | High-voltage N-channel IGBT field-effect transistor |
| Manufactor | / |
| DC | NEW |
| Describe | TO-252 |
| Supplier Device Packaging | REEL |
| Technology | SGT-II |
| Polarity | N |
| BVDSS(V) | 100 |
| ID(A) | 42 |
| VTH(V) | 1.7 |
| RDS(ON)@10VTyp(mΩ) | 15.5 |
| RDS(ON)@4.5VTyp(mΩ) | 19.5 |
| QG(nC) | 37.6 |
| PD(W) | 72 |
| PKG | / |
Product Data Book：NCEP18N10AK
