Product Details
IXTN30N100L Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 13700pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 30A continuous drain current (ID).A drainage-to-sourcebreakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 30 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 70A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (20V), this device contributes to a reduction in overall power consumption.
IXTN30N100L Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 70A.
a 1000V drain to source voltage (Vdss)
IXTN30N100L Applications
There are a lot of IXYS
IXTN30N100L applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Product Description
ANSC PART# | ANSC- IXTN30N100L |
Part# | IXTN30N100L |
Type | Transistors |
Manufactor | IXYS |
DC | new |
Package / Case | SOT-227B |
Supplier Device Package | Tube |
Product Attributes
| TYPE | DESCRIPTION |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | IXYS |
| Series | Linear |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain (Id) @ 25掳C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 15A, 20V |
| Vgs(th) (Max) @ Id | 5.5V @ 250碌A |
| Gate Charge (Qg) (Max) @ Vgs | 545 nC @ 20 V |
| Vgs (Max) | 卤30V |
| Input Capacitance (Ciss) (Max) @ Vds | 13700 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 800W (Tc) |
| Operating Temperature | -55掳C ~ 150掳C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227B |
| Package / Case | SOT-227-4, miniBLOC |
| Base Product Number | IXTN30 |
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