Hi,welcome
+86 135 5637 6665 +852 2632 9637 6*12 hours online call
Image is only a reference

Hot sale original IXTN30N100L MOSFET N-CH 1000V 30A SOT227B N-Channel 1000 V 30A (Tc) 800W (Tc) Chassis Mount

IXTN30N100L

Model:IXTN30N100L

Manufacturer:IXYS

Package:SOT-227B

Detail

Product Details


IXTN30N100L Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 13700pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 30A continuous drain current (ID).A drainage-to-sourcebreakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 30 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 70A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (20V), this device contributes to a reduction in overall power consumption.

IXTN30N100L Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 70A.
a 1000V drain to source voltage (Vdss)


IXTN30N100L Applications


There are a lot of IXYS
IXTN30N100L applications of single MOSFETs transistors.


  • AC-DC Power Supply

  • Synchronous Rectification for ATX 1 Server I Telecom PSU

  • Motor drives and Uninterruptible Power Supplies

  • Micro Solar Inverter

  • DC/DC converters

  • Power Tools

  • Motor Drives and Uninterruptible Power Supples

  • Synchronous Rectification

  • Battery Protection Circuit

  • Telecom 1 Sever Power Supplies


Product Description


ANSC PART#

 ANSC- IXTN30N100L

Part#

IXTN30N100L

Type

Transistors

Manufactor

IXYS

DC

new

Package / Case

SOT-227B

Supplier Device Package

Tube


Product Attributes           

TYPEDESCRIPTION
CategoryDiscrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
MfrIXYS
SeriesLinear
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000 V
Current - Continuous Drain (Id) @ 25掳C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs450mOhm @ 15A, 20V
Vgs(th) (Max) @ Id5.5V @ 250碌A
Gate Charge (Qg) (Max) @ Vgs545 nC @ 20 V
Vgs (Max)卤30V
Input Capacitance (Ciss) (Max) @ Vds13700 pF @ 25 V
FET Feature-
Power Dissipation (Max)800W (Tc)
Operating Temperature-55掳C ~ 150掳C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC
Base Product NumberIXTN30


Actual image of the product                

20666.jpg

Product Data Book

image

image

image

image

Payment&Transportation

Official Certificate&Certificate

Standard packaging

Multiple product supply

Welcome to visit our company

Warehouse Real Shot



User Info:
Phone number
+86
  • +86
  • +886
  • +852
Company Name
Email
Product model
Quantity
Comment message