Product Details
BSS138-7-F Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 50pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 200mA.With a drain-source breakdown voltage of 50V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 50V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 20 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.1.2V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.
BSS138-7-F Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 50V voltage
the turn-off delay time is 20 ns
a threshold voltage of 1.2V
BSS138-7-F Applications
There are a lot of Diodes Incorporated
BSS138-7-F applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Product Description
ANSC PART# | ANSC- BSS138-7-F |
Part# | BSS138-7-F |
Type: | Transistors |
Manufactor | Diodes Incorporated |
DC | new |
Product Attributes
TYPE | DESCRIPTION |
Category | Discrete Semiconductor Products |
Transistors | |
FETs, MOSFETs | |
Single FETs, MOSFETs | |
Mfr | Diodes Incorporated |
Series | - |
Packaging | Tape & Reel (TR) |
Cut Tape (CT) | |
- | |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 50 V |
Current - Continuous Drain (Id) @ 25掳C | 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.5Ohm @ 220mA, 10V |
Vgs(th) (Max) @ Id | 1.5V @ 250碌A |
Vgs (Max) | 卤20V |
Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 10 V |
FET Feature | - |
Power Dissipation (Max) | 300mW (Ta) |
Operating Temperature | -55掳C ~ 150掳C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Base Product Number | BSS138 |
Actual image of the product
Product datasheet
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