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Hot sale original electronics BSS138-7-F MOSFET N-CH 50V 200MA SOT23-3 N-Channel 50 V 200mA (Ta) 300mW (Ta) Surface Mount SOT-23-3

BSS138-7-F

Model:BSS138-7-F

Detail

Product Details


BSS138-7-F Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 50pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 200mA.With a drain-source breakdown voltage of 50V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 50V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 20 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.1.2V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.

BSS138-7-F Features


a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 50V voltage
the turn-off delay time is 20 ns
a threshold voltage of 1.2V


BSS138-7-F Applications


There are a lot of Diodes Incorporated
BSS138-7-F applications of single MOSFETs transistors.


  • Lighting

  • Uninterruptible Power Supply

  • AC-DC Power Supply

  • Synchronous Rectification for ATX 1 Server I Telecom PSU

  • Motor drives and Uninterruptible Power Supplies

  • Micro Solar Inverter

  • DC/DC converters

  • Power Tools

  • Motor Drives and Uninterruptible Power Supples

  • Synchronous Rectification


Product Description


ANSC PART#

 ANSC- BSS138-7-F

Part#

BSS138-7-F

Type

Transistors

Manufactor

Diodes Incorporated

DC

new


Product Attributes


TYPEDESCRIPTION
CategoryDiscrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
MfrDiodes Incorporated
Series-
PackagingTape & Reel (TR)
Cut Tape (CT)
-
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)50 V
Current - Continuous Drain (Id) @ 25掳C200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id1.5V @ 250碌A
Vgs (Max)卤20V
Input Capacitance (Ciss) (Max) @ Vds50 pF @ 10 V
FET Feature-
Power Dissipation (Max)300mW (Ta)
Operating Temperature-55掳C ~ 150掳C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3
Base Product NumberBSS138



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