Product Details
General Description
This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
• Q1: N-Channel
4.5 A, 60 V
RDS(on) = 55 mΩ @ VGS = 10V
RDS(on) = 75 mΩ @ VGS = 4.5V
• Q2: P-Channel
–3.5 A, –60 V
RDS(on) = 105 mΩ @ VGS = –10V
RDS(on) = 135 mΩ @ VGS = –4.5V
Product Description
ANSC PART# | ANSC- FDS4559 |
Part# | FDS4559 |
Type： | Electronic components |
Manufactor | onsemi |
DC | new |
Actual image of the product
Product Attributes
TYPE | DESCRIPTION |
|---|---|
Category | Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays |
Manufacturer | onsemi |
Series | PowerTrench® |
Packaging | Tape & Reel (TR) Cut Tape (CT) |
Part Status | Active |
Technology | MOSFET (Metal Oxide) |
Configuration | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 4.5A, 3.5A |
Rds On (Max) @ Id, Vgs | 55mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 25V, 759pF @ 25V |
Power - Max | 1W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SOIC |
Base Product Number | FDS45 |
Product datasheet
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