Product Details

TK10A80E : MOSFETs Silicon N-Channel MOS (π-MOS)

1. Applications

• Switching Voltage Regulators

2. Features

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit

1: Gate 2: Drain 3: Source

TO-220SIS Start of commercial production 1 2013-10 2014-03-04 Rev.3.0

Product Description

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Product datasheet

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Official Certificate&Certificate

Standard packaging

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