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Hot sale original electronics onsemi FDC5614P MOSFET P-CH 60V 3A SUPERSOT6 P-Channel 60 V 3A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

FDC5614P

Model:FDC5614P

Manufacturer:onsemi / Fairchild

Detail

Product Details

Description

The FDC5614P is a -60V P-channel logic level PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or it can minimize the undesirable voltage spikes. This product is general usage and suitable for many different applications.


Features

• –3 A, –60 V. RDS(ON) = 0.105 Ω @ VGS = –10 V RDS(ON) = 0.135 Ω @ VGS = –4.5 V
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)


Application

• DC-DC converters
• Load switch
• Power management


Product Description

ANSC PART#

 ANSC- FDC5614P

Part#

FDC5614P

Type

Electronic components

Manufactor

onsemi / Fairchild

DC

new


Actual image of the product                

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Product Attributes

TYPE

DESCRIPTION

Category

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

Mfr

onsemi

Series

PowerTrench®

Packaging

Tape & Reel (TR)

Cut Tape (CT)

Part Status

Active

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60 V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

105mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

24 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

759 pF @ 30 V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SuperSOT™-6

Package / Case

SOT-23-6 Thin, TSOT-23-6

Base Product Number

FDC5614

Product datasheet

For more information, please download

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