Product Details
SI5435BDC-T1-E3 Overview
The drain current is the maximum continuous current the device can conduct, and this device has -5.9A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 32 ns.This device has a drain-to-source resistance of 45mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
SI5435BDC-T1-E3 Features
a continuous drain current (ID) of -5.9A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 32 ns
single MOSFETs transistor is 45mOhm
a 30V drain to source voltage (Vdss)
SI5435BDC-T1-E3 Applications
There are a lot of Vishay Siliconix
SI5435BDC-T1-E3 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Product Description
ANSC PART# | ANSC- SI5435BDC-T1-E3 |
Part# | SI5435BDC-T1-E3 |
Type： | Electronic components |
Manufactor | VISHAY |
DC | new |
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Product Attributes
TYPE | DESCRIPTION |
|---|---|
Category | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
Mfr | Vishay Siliconix |
Series | TrenchFET® |
Packaging | Tape & Reel (TR) Cut Tape (CT) |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 45mOhm @ 4.3A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 1.3W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 1206-8 ChipFET™ |
Package / Case | 8-SMD, Flat Lead |
Base Product Number | SI5435 |
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