Product Details
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Features
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Advantages
• Easy to mount
• Space savings
• High power density
Product Description
ANSC PART# | ANSC- JAN1N752A-1 |
Part# | JAN1N752A-1 |
Type： | Electronic components |
Manufactor | IXYS |
DC | new |
Actual image of the product
Product Attributes
TYPE | DESCRIPTION |
|---|---|
Category | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
Mfr | IXYS |
Series | HiPerFET™ |
Packaging | Tube |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 150 V |
Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 28mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id | 4V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AD (IXFH) |
Package / Case | TO-247-3 |
Base Product Number | IXFH70 |
Product datasheet
For more information, please download
Payment&Transportation
Official Certificate&Certificate
Standard packaging
Multiple product supply
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