Product Description
ANSC PART# | ANSC- FQD3N60CTM-WS |
Part# | FQD3N60CTM-WS |
Type： | Integrated Circuits |
Manufactor | Original |
DC | new |
Actual image of the product
| TYPE | DESCRIPTION |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | onsemi |
| Series | QFET庐 |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25掳C | 2.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.4Ohm @ 1.2A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250碌A |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Vgs (Max) | 卤30V |
| Input Capacitance (Ciss) (Max) @ Vds | 565 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Operating Temperature | -55掳C ~ 150掳C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | FQD3N60 |
Product datasheet
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