Product Details

2SB976 Product details

Silicon PNP epitaxial planar type

For low-frequency output amplification

For DC-DC converter

For stroboscope

■ Features

• Low collector-emitter saturation voltage VCE(sat)

• Large collector current IC

Product Description

Actual image of the product                

 Type Designator: 2SB976

   Material of Transistor: Si

   Polarity: PNP

   Maximum Collector Power Dissipation (Pc): 0.75 W

   Maximum Collector-Base Voltage |Vcb|: 25 V

   Maximum Emitter-Base Voltage |Veb|: 8 V

   Maximum Collector Current |Ic max|: 5 A

   Max. Operating Junction Temperature (Tj): 195 °C

   Transition Frequency (ft): 60 MHz

   Forward Current Transfer Ratio (hFE), MIN: 200

   Noise Figure, dB: -

   Package: TO92

   Product datasheet             

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