Product Details
BC807-40LT1G Overview
In this device, the DC current gain is 250 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -700mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
BC807-40LT1G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC807-40LT1G Applications
There are a lot of ON Semiconductor
BC807-40LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
Product Description
ANSC PART# | ANSC- BC807-40LT1G |
Part# | BC807-40LT1G |
Type: | Electronic components |
Manufactor | onsemi |
DC | new |
Actual image of the product
TYPE | DESCRIPTION |
---|---|
Category | Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors |
Mfr | onsemi |
Series | - |
Packaging | Tape & Reel (TR)Cut Tape (CT) |
Part Status | Active |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 500 mA |
Voltage - Collector Emitter Breakdown (Max) | 45 V |
Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100mA, 1V |
Power - Max | 300 mW |
Frequency - Transition | 100MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 (TO-236) |
Base Product Number | BC807 |
Product datasheet
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