Product Details
General description
10W plastic LDMOS power transistor for base station applications at frequencies
from 700 MHz to 2700 MHz.
Features and benefits
■ High efficiency
■ Excellent ruggedness
■ Designed for broadband operation
■ Excellent thermal stability
■ High power gain
■ Integrated ESD protection
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous
Substances (RoHS)
Applications
■ CDMA
■ W-CDMA
■ GSM EDGE
■ MC-GSM
■ LTE
■ WiMAX
Product Description
ANSC PART# | ANSC- BGY835C |
Part# | BGY835C |
Type: | Module |
Manufactor | NXP |
DC | new |
Actual image of the product
Parameter | Value |
---|---|
fi(RF) [max] (MHz) | 870 |
Number of pins | 7 |
Package Style | SFM |
@f [max] (MHz) | 860 |
@f [min] (MHz) | 860 |
ICC [max] (mA) | 340 |
@f [max] (MHz) | 50 |
Security Status | COMPANY PUBLIC |
Frequency (Min-Max) (MHz) | 40,870 |
Parameter | Value |
---|---|
Frequency Band (Hz) | 40000000,870000000 |
Description | CATV amplifier module |
fi(RF) [min] (MHz) | 40 |
@f | 0.05 |
Frequency (Max) (MHz) | 870 |
Frequency (Min) (MHz) | 40 |
Frequency (Min-Max) (GHz) | 0.040000003 to 0.87 |
frange [max] (MHz) | 870 |
frange [min] (MHz) | 40 |
Product datasheet
For more information, please download