Product Description
ANSC PART# | ANSC- BSM50GB120DN2 |
Part# | BSM50GB120DN2 |
Type： | Module |
Manufactor | Infineon |
DC | new |
Actual image of the product
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer: | Infineon |
| Product Category: | IGBT Modules |
| RoHS: | - |
| Product: | IGBT Silicon Modules |
| Configuration: | Half Bridge |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 2.5 V |
| Continuous Collector Current at 25 C: | 78 A |
| Gate-Emitter Leakage Current: | 200 nA |
| Pd - Power Dissipation: | 400 W |
| Package / Case: | Half Bridge1 |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Tray |
| Brand: | Infineon Technologies |
| Height: | 30.5 mm |
| Length: | 94 mm |
| Maximum Gate Emitter Voltage: | 20 V |
| Mounting Style: | Chassis Mount |
| Product Type: | IGBT Modules |
| Factory Pack Quantity: | 10 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Width: | 34 mm |
| Part # Aliases: | - |
| Unit Weight: | 6.248606 oz |
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