Product Details
Features
| Order code | VDSS @ TJmax | RDS(on) max | ID |
| STL18NM60N | 650 V | < 0.310 Ω | 12 A (1) |
1. The value is rated according to Rthj-case
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters
Product Description
ANSC PART# | ANSC- 18NM60N |
Part# | 18NM60N |
Type： | Electronic components |
Manufactor | Original |
DC | new |
Actual image of the product
Product datasheet
For more information, please download
Payment&Transportation
Official Certificate&Certificate
Standard packaging
Multiple product supply
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