Hot sale original electronics Transistors STP12NM50 MOSFET N-CH 500V 12A TO220AB N-Channel 500 V 12A (Tc) 160W (Tc) Through Hole TO-220_Electronic components & Bom

Product Details

Description

The MDmesh™ is a new revolutionary Power MOSFET technology that associates

the multiple drain process with the company’s PowerMESH™ horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high

dv/dt and excellent avalanche characteristics.

The adoption of the Company’s proprietary strip technique yields overall dynamic

performance that is significantly better than that of similar competition’s products.

All features

TYPE	DESCRIPTION
ANSC PART#	ANSC - STP12NM50
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	STMicroelectronics
Series	MDmesh™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	350mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	160W (Tc)
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
Base Product Number	STP12

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