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Hot sale original electronics SQ2309ES-T1_GE3 Transistor MOSFET P-CH 60V 1.7A TO236 P-Channel 60 V 1.7A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)

SQ2309ES-T1_GE3

Model:SQ2309ES-T1_GE3

Manufacturer:VISHAY

Package:SOT-23-3 (TO-236)

Detail

SQ2309ES-T1_GE3 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 265pF @ 25V.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 125mOhm.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

SQ2309ES-T1_GE3 Features


single MOSFETs transistor is 125mOhm
a 60V drain to source voltage (Vdss)


SQ2309ES-T1_GE3 Applications


There are a lot of Vishay Siliconix
SQ2309ES-T1_GE3 applications of single MOSFETs transistors.


  • DC/DC converters

  • Power Tools

  • Motor Drives and Uninterruptible Power Supples

  • Synchronous Rectification

  • Battery Protection Circuit

  • Telecom 1 Sever Power Supplies

  • Industrial Power Supplies

  • PFC stages, hard switching PWM stages and resonant switching

  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

  • Lighting, Server, Telecom and UPS.



Product Description


ANSC PART#

 ANSC- SQ2309ES-T1_GE3

Part#

SQ2309ES-T1_GE3

Type:

Transistor

Manufactor

Original

DC

new


Actual image of the product 

31423.jpg

TYPE

DESCRIPTION

Category

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

Mfr

Vishay Siliconix

Series

TrenchFET®

Packaging

Tape & Reel (TR)

Cut Tape (CT)

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60 V

Current - Continuous Drain (Id) @ 25°C

1.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

336mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.5 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

265 pF @ 25 V

FET Feature

-

Power Dissipation (Max)

2W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Grade

Automotive

Qualification

AEC-Q101

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

Base Product Number

SQ2309




Product datasheet   

For more information, please download

17182655864a7c84.jpg

1718265587bc56bb.jpg

171826558691d93c.jpg


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