Part# | NCE2007NS |
Type: | high-voltage N+N-channel IGBT field-effect transistor |
Manufactor | NCE |
DC | NEW |
Describe | SOT23-6 |
Supplier Device Packaging | REEL |
Technology | Trench dual core |
Polarity | N+N |
BVDSS(V) | 20 |
ID(A) | 6 |
VTH(V) | 0.7 |
RDS(ON)@4.5VTyp(mΩ) | 13.5 |
QG(nC) | 9.5 |
PD(W) | 1.5 |
PKG | / |