| Part# | NCE2006Y |
| Type: | high-voltage N-channel IGBT field-effect transistor |
| Manufactor | / |
| DC | NEW |
| Describe | SOT23 |
| Supplier Device Packaging | REEL |
| Technology | Trench |
| Polarity | N |
| BVDSS(V) | 20 |
| ID(A) | 6 |
| VTH(V) | 0.7 |
| RDS(ON)@4.5VTyp(mΩ) | 10.5 |
| QG(nC) | 15 |
| PD(W) | 1.5 |
| PKG | / |
Image is only a referenceNCE2006Y SOT233 high-voltage N-channel IGBT field-effect transistor
NCE2006Y
Model:NCE2006Y
Manufacturer:/
Package:SOT233
| Part# | NCE2006Y |
| Type: | high-voltage N-channel IGBT field-effect transistor |
| Manufactor | / |
| DC | NEW |
| Describe | SOT23 |
| Supplier Device Packaging | REEL |
| Technology | Trench |
| Polarity | N |
| BVDSS(V) | 20 |
| ID(A) | 6 |
| VTH(V) | 0.7 |
| RDS(ON)@4.5VTyp(mΩ) | 10.5 |
| QG(nC) | 15 |
| PD(W) | 1.5 |
| PKG | / |