NCE N-Channel Enhancement Mode Power MOSFET BSS138K SOT23_Integrated Circuit

Products Features

• Low On−Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra−Small Surface Mount Package

• Green Compound

• ESD HBM = 2000 V as per JEDEC A114A;

ESD CDM = 2000 V as per JEDEC C101C

• This Device is Pb−Free and is RoHS Compliant

Attribute	Attribute value
ANSM-Model	BSS138K
Category	Discrete Semiconductor Products
	Transistors
	FETs, MOSFETs
	Single FETs, MOSFETs
Mfr	onsemi
Series	-
Packaging	Tape & Reel (TR)
	Cut Tape (CT)
	Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	50 V
Current - Continuous Drain (Id) @ 25°C	220mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 2.5V
Rds On (Max) @ Id, Vgs	1.6Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	2.4 nC @ 10 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	58 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	350mW (Ta)
Operating Temperature	-55°C ~ 150°C(TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3
Package / Case	TO-236-3, SC-59, SOT-23-3
Base Product Number	BSS138

BSS138K

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