| Part# | NCE40P06J |
| Type： | high-voltage P-channel IGBT MOS transistor |
| Manufactor | / |
| DC | NEW |
| Describe | DFN6 |
| Supplier Device Packaging | REEL |
| Technology | Trench |
| Polarity | P |
| BVDSS(V) | -40 |
| ID(A) | -6 |
| VTH(V) | -1.6 |
| RDS(ON)@10VTyp(mΩ) | 29 |
| RDS(ON)@4.5VTyp(mΩ) | 34 |
| QG(nC) | 23 |
| PD(W) | 2 |
| PKG | / |
