| Part# | NCE20P85GU |
| Type： | high-voltage P-channel IGBT MOS transistor |
| Manufactor | / |
| DC | NEW |
| Describe | DFN8 |
| Supplier Device Packaging | REEL |
| Technology | Trench |
| Polarity | P |
| BVDSS(V) | -20 |
| ID(A) | -85 |
| VTH(V) | -0.6 |
| RDS(ON)@4.5VTyp(mΩ) | 1.4 |
| QG(nC) | 115 |
| PD(W) | 150 |
| PKG | / |
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