| Part# | NCEP10N85AQ |
| Type： | High voltage N-channel IGBT MOS transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | DFN8 |
| Supplier Device Packaging | REEL |
| Technology | SGT-II |
| Polarity | N |
| BVDSS(V) | 85 |
| ID(A) | 51 |
| VTH(V) | 1.7 |
| RDS(ON)@10VTyp(mΩ) | 9.5 |
| RDS(ON)@4.5VTyp(mΩ) | 12.5 |
| QG(nC) | 40 |
| PD(W) | 56 |
| PKG | / |
