| Part# | NCE30NP1812K |
| Type： | high-voltage N+P-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO252 |
| Supplier Device Packaging | REEL |
| Technology | Trench |
| Polarity | N+P |
| BVDSS(V) | -30 |
| ID(A) | -12 |
| VTH(V) | -1.7 |
| RDS(ON)@10VTyp(mΩ) | 43 |
| RDS(ON)@4.5VTyp(mΩ) | 67 |
| QG(nC) | 12.6 |
| PD(W) | 20 |
| PKG | / |
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