| Part# | NCE65TF180F |
| Type: | high-voltage N-channel IGBT field-effect transistor |
| Manufactor | / |
| DC | NEW |
| Describe | TO220F |
| Supplier Device Packaging | TUBE |
| Technology | SJ-Ⅲ TF |
| Polarity | N |
| BVDSS(V) | 650 |
| ID(A) | 21 |
| VTH(V) | 3.5 |
| RDS(ON)@10VTyp(mΩ) | 150 |
| PD(W) | 33.8 |
| PKG | / |






Image is only a referenceOriginal spot best-selling product NCE65TF180F TO220 high-voltage N-channel IGBT field-effect transistor
NCE65TF180F
Model:NCE65TF180F
Manufacturer:/
Package:TO220
| Part# | NCE65TF180F |
| Type: | high-voltage N-channel IGBT field-effect transistor |
| Manufactor | / |
| DC | NEW |
| Describe | TO220F |
| Supplier Device Packaging | TUBE |
| Technology | SJ-Ⅲ TF |
| Polarity | N |
| BVDSS(V) | 650 |
| ID(A) | 21 |
| VTH(V) | 3.5 |
| RDS(ON)@10VTyp(mΩ) | 150 |
| PD(W) | 33.8 |
| PKG | / |





