| Part# | NCE60P12AS |
| Type： | High-voltage P-channel IGBT field-effect transistor |
| Manufactor | / |
| DC | NEW |
| Describe | SOP8 |
| Supplier Device Packaging | REEL |
| Technology | Trench |
| Polarity | P |
| BVDSS(V) | -60 |
| ID(A) | -12 |
| VTH(V) | -1.8 |
| RDS(ON)@10VTyp(mΩ) | 11 |
| RDS(ON)@4.5VTyp(mΩ) | 13 |
| QG(nC) | 62 |
| PD(W) | 3.5 |
Product Data Book：NCE60P12AS
