| NCE30NP4030G | NCE30P55L |
| Type： | High-voltage P-channel IGBT field-effect transistor |
| Manufactor | / |
| DC | NEW |
| Describe | TO-251S |
| Supplier Device Packaging | TUBE |
| Technology | Trench |
| Polarity | P |
| BVDSS(V) | -30 |
| ID(A) | -55 |
| VTH(V) | -1.5 |
| RDS(ON)@10VTyp(mΩ) | 6.8 |
| RDS(ON)@4.5VTyp(mΩ) | 10 |
| QG(nC) | 71 |
| PD(W) | 110 |
Product Data Book: NCE30P55L
