| NCE30NP4030G | NCE70T2K2I |
| Type: | High-voltage N-channel IGBT field-effect transistor |
| Manufactor | / |
| DC | NEW |
| Describe | TO-251 |
| Supplier Device Packaging | TUBE |
| Technology | SJ-Ⅲ |
| Polarity | N |
| BVDSS(V) | 700 |
| ID(A) | 2 |
| VTH(V) | 3.5 |
| RDS(ON)@10VTyp(mΩ) | 2200 |
| PD(W) | 22 |






Image is only a referenceHot selling product original stock NCE70T2K2I TO251 high-voltage N-channel IGBT MOS tube
NCE70T2K2I
Model:NCE70T2K2I
Manufacturer:/
Package:TO251
| NCE30NP4030G | NCE70T2K2I |
| Type: | High-voltage N-channel IGBT field-effect transistor |
| Manufactor | / |
| DC | NEW |
| Describe | TO-251 |
| Supplier Device Packaging | TUBE |
| Technology | SJ-Ⅲ |
| Polarity | N |
| BVDSS(V) | 700 |
| ID(A) | 2 |
| VTH(V) | 3.5 |
| RDS(ON)@10VTyp(mΩ) | 2200 |
| PD(W) | 22 |





