NCE30NP4030G | NCE65T1K2K |
Type: | High-voltage N-channel IGBT field-effect transistor |
Manufactor | NCE |
DC | NEW |
Describe | TO-252 |
Supplier Device Packaging | REEL |
Technology | SJ-Ⅲ |
Polarity | N |
BVDSS(V) | 650 |
ID(A) | 4 |
VTH(V) | 3.5 |
RDS(ON)@10VTyp(mΩ) | 950 |
PD(W) | 41 |
Product Data Book:NCE65T1K2K