Part# | NCE0157D |
Type: | high-voltage N-channel IGBT MOS tube |
Manufactor | NCE |
DC | NEW |
Describe | TO-263 |
Supplier Device Packaging | TUBE |
Technology | Trench |
Polarity | N |
BVDSS(V) | 100 |
ID(A) | 57 |
VTH(V) | 3 |
RDS(ON)@10VTyp(mΩ) | 12 |
QG(nC) | 95 |
PD(W) | 180 |
PKG | / |
Spot original supply hot selling high-pressure N-channel IGBT field-effect transistor NCE0157D TO263
NCE0157D
Model:NCE0157D
Manufacturer:NCE
Package:TO263