| Part# | NCEP10N12K |
| Type： | high-voltage N-channel IGBT field-effect transistor |
| Manufactor | / |
| DC | NEW |
| Describe | TO252 |
| Supplier Device Packaging | REEL |
| Technology | SGT-II |
| Polarity | N |
| BVDSS(V) | 120 |
| ID(A) | 65 |
| VTH(V) | 3 |
| RDS(ON)@10VTyp(mΩ) | 8.7 |
| QG(nC) | 55 |
| PD(W) | 120 |
| PKG | / |
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