| Part# | NCE30P55K |
| Type： | high-voltage P-channel IGBT field-effect transistor |
| Manufactor | / |
| DC | NEW |
| Describe | TO-252-2L |
| Supplier Device Packaging | REEL |
| Technology | Trench |
| Polarity | P |
| BVDSS(V) | -30 |
| ID(A) | -55 |
| VTH(V) | -1.5 |
| RDS(ON)@10VTyp(mΩ) | 6.8 |
| RDS(ON)@4.5VTyp(mΩ) | 10 |
| QG(nC) | 70.7 |
| PD(W) | 110 |
| PKG | / |
