| Part# | NCE2012 |
| Type: | high-voltage N-channel IGBT field-effect transistor |
| Manufactor | / |
| DC | NEW |
| Describe | SOP-8 |
| Supplier Device Packaging | REEL |
| Technology | Trench |
| Polarity | N |
| BVDSS(V) | 20 |
| ID(A) | 12 |
| VTH(V) | 0.8 |
| RDS(ON)@4.5VTyp(mΩ) | 6 |
| QG(nC) | 42 |
| PD(W) | 2.5 |
| PKG | / |

Image is only a referenceStock original supply chip high-voltage N-channel IGBT MOS transistor NCE2012 SOP8
NCE2012
Model:NCE2012
Manufacturer:/
Package:SOP8