Part# | NCE2012 |
Type: | high-voltage N-channel IGBT field-effect transistor |
Manufactor | NCE |
DC | NEW |
Describe | SOP-8 |
Supplier Device Packaging | REEL |
Technology | Trench |
Polarity | N |
BVDSS(V) | 20 |
ID(A) | 12 |
VTH(V) | 0.8 |
RDS(ON)@4.5VTyp(mΩ) | 6 |
QG(nC) | 42 |
PD(W) | 2.5 |
PKG | / |
Stock original supply chip high-voltage N-channel IGBT MOS transistor NCE2012 SOP8
NCE2012
Model:NCE2012
Manufacturer:NCE
Package:SOP8
Part# | NCE2012 |
Type: | high-voltage N-channel IGBT field-effect transistor |
Manufactor | NCE |
DC | NEW |
Describe | SOP-8 |
Supplier Device Packaging | REEL |
Technology | Trench |
Polarity | N |
BVDSS(V) | 20 |
ID(A) | 12 |
VTH(V) | 0.8 |
RDS(ON)@4.5VTyp(mΩ) | 6 |
QG(nC) | 42 |
PD(W) | 2.5 |
PKG | / |