| Part# | NCE65TF360D |
| Type: | High-voltage N-channel IGBT field-effect transistor |
| Manufactor | / |
| DC | NEW |
| Describe | TO-263 |
| Supplier Device Packaging | TUBE |
| Technology | SJ-Ⅲ TF |
| Polarity | N |
| BVDSS(V) | 650 |
| ID(A) | 11.5 |
| VTH(V) | 3.5 |
| RDS(ON)@10VTyp(mΩ) | 290 |
| PD(W) | 101 |
| PKG | / |






Image is only a referenceOne stop spot supply of NCE65TF360D TO263 chip high-voltage N-channel IGBT field-effect transistor
NCE65TF360D
Model:NCE65TF360D
Manufacturer:/
Package:TO263