| Part# | NCE65T1K2I |
| Type： | High-voltage N-channel IGBT field-effect transistor |
| Manufactor | / |
| DC | NEW |
| Describe | TO-251 |
| Supplier Device Packaging | TUBE |
| Technology | SJ-Ⅲ |
| Polarity | N |
| BVDSS(V) | 650 |
| ID(A) | 4 |
| VTH(V) | 3.5 |
| RDS(ON)@10VTyp(mΩ) | 950 |
| PD(W) | 41 |
| PKG | / |
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