| Part# | NCEP12T12D |
| Type： | High-voltage N-channel IGBT field-effect transistor |
| Manufactor | / |
| DC | NEW |
| Describe | TO-263 |
| Supplier Device Packaging | TUBE |
| Technology | SGT-I |
| Polarity | N |
| BVDSS(V) | 120 |
| ID(A) | 129 |
| VTH(V) | 3.3 |
| RDS(ON)@10VTyp(mΩ) | 4.8 |
| QG(nC) | 84.7 |
| PD(W) | 185 |
| PKG | / |
