Part# | NCE6890D |
Type: | high-voltage N-channel IGBT field-effect transistor |
Manufactor | NCE |
DC | NEW |
Describe | TO-263 |
Supplier Device Packaging | TUBE |
Technology | Trench |
Polarity | N |
BVDSS(V) | 68 |
ID(A) | 90 |
VTH(V) | 3 |
RDS(ON)@10VTyp(mΩ) | 6.5 |
QG(nC) | 35 |
PD(W) | 130 |
PKG | / |
NCE6890D TO263 One stop high voltage N-channel IGBT MOS transistor stock supply of original chips
NCE6890D
Model:NCE6890D
Manufacturer:NCE
Package:TO263