| Part# | NCEP02T10D |
| Type： | high-voltage N-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO-263 |
| Supplier Device Packaging | TUBE |
| Technology | SGT-I |
| Polarity | N |
| BVDSS(V) | 200 |
| ID(A) | 100 |
| VTH(V) | 3 |
| RDS(ON)@10VTyp(mΩ) | 10 |
| QG(nC) | 87 |
| PD(W) | 300 |
| PKG | / |
