Part# | NCEP12N12K |
Type: | high-voltage N-channel IGBT field-effect transistor |
Manufactor | NCE |
DC | NEW |
Describe | TO252 |
Supplier Device Packaging | REEL |
Technology | SGT-II |
Polarity | N |
BVDSS(V) | 120 |
ID(A) | 60 |
VTH(V) | 3 |
RDS(ON)@10VTyp(mΩ) | 12 |
QG(nC) | 45 |
PD(W) | 90 |
PKG | / |
Original NCEP12N12K TO252 chip high-voltage N-channel IGBT MOS transistor available in stock
NCEP12N12K
Model:NCEP12N12K
Manufacturer:NCE
Package:TO252