Product Details
| Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industrys smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. ● Ultra Low On-Resistance ● P-Channel MOSFET ● Surface Mount ● Available in Tape & Reel ● Low Gate Charge |
Product Description
| Type | Description |
| PART# | IRLML6402PBF |
| Ihs Manufacturer | Original |
| Part Package Code | SOT-23 |
| Package Description | HALOGEN AND LEAD FREE, MICRO-3 |
| Pin Count | 3 |
| Additional Feature | ULTRA LOW RESISTANCE |
| Avalanche Energy Rating (Eas) | 11 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 20 V |
| Drain Current-Max (ID) | 3.7 A |
| Drain-source On Resistance-Max | 0.065 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-236AB |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 1.3 W |
| Pulsed Drain Current-Max (IDM) | 22 A |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
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