Product Features

- VDD/VDDQ = 1.35V (1.283V to 1.45V)

 - Backward compatible to VDD = VDDQ = 1.5V ±0.075V

- 8n-bit prefetch DDR architecture

 - Differential clock inputs (CK, CK#)

- 8 internal banks 

- Nominal and dynamic on-die termination (ODT)

 for data, strobe, and mask signals

- Programmable CAS (READ) latency (CL)

 - Programmable CAS additive latency (AL)

- Programmable CAS (WRITE) latency (CWL)

- Fixed burst length (BL) of 8 and burst chop (BC) of 4

 (via the mode register set [MRS])

- Selectable BC4 or BL8 on–the-fly (OTF)

- Self refresh mode

- Tc of 0℃ to +95℃

 ∙ 64ms, 8192 cycle refresh at 0℃ to +85℃

 ∙ 32ms at 85℃ to +95℃

 - Self refresh temperature (SRT)

 - Automatic self refresh (ASR)

 - Write leveling

 - Multipurpose register

 - Output driver calibration 

• Configuration

 - 64 Meg X 16 (8 Meg X 16 X 8 Banks).

 - 128 Meg X 8 (16 Meg X 8 X 8 Banks)

 - 256 Meg X 4 (32 Meg X 4 X 8 Banks)

• Timing – Cycle time

 - 1.07ns @ CL = 13 (-9M)

 - 1.25ns @ CL = 11 (-8K)

- 1.50ns @ CL = 9 (-6H)

- 1.87ns @ CL = 7 (-5F)

• Operating Temperature Ranges

 - Commercial (0℃ to +95℃)

 - Industrial (-40℃ to +95℃)

  Specifications

Actual product photos

Product Data Book：

For more product information, please download the PDF

Payment&Transportation

Official Certificate&Certificate

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Company office environment

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