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Professional supply Integrated circuit IC MT47H32M16HR-25E:G SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 400 ps 84-FBGA

MT47H32M16HR-25E:G

Model:MT47H32M16HR-25E:G

Manufacturer:Micron

Package:84-TFBGA

Detail

Product Features


• VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V

• JEDEC-standard 1.8V I/O (SSTL_18-compatible)

• Differential data strobe (DQS, DQS#) option

• 4n-bit prefetch architecture

• Duplicate output strobe (RDQS) option for x8

• DLL to align DQ and DQS transitions with CK

• 4 internal banks for concurrent operation

• Programmable CAS latency (CL)

• Posted CAS additive latency (AL)

• WRITE latency = READ latency - 1 t CK

• Selectable burst lengths: 4 or 8

• Adjustable data-output drive strength

• 64ms, 8192-cycle refresh

• On-die termination (ODT)

• Industrial temperature (IT) option

• RoHS-compliant

• Supports JEDEC clock jitter specification


Specifications


Attribute

Attribute value

ANSM-Part#

ANSM-MT47H32M16HR-25E:G

Category

Integrated Circuits (ICs)

Memory

Memory

Mfr

Micron Technology Inc.

Series

-

Package

Tray

Product Status

Obsolete

DigiKey Programmable

Not Verified

Memory Type

Volatile

Memory Format

DRAM

Technology

SDRAM - DDR2

Memory Size

512Mbit

Memory Organization

32M x 16

Memory Interface

Parallel

Clock Frequency

400 MHz

Write Cycle Time - Word, Page

15ns

Access Time

400 ps

Voltage - Supply

1.7V ~ 1.9V

Operating Temperature

0°C ~ 85°C (TC)

Mounting Type

Surface Mount

Package / Case

84-TFBGA

Supplier Device Package

84-FBGA (8x12.5)

Base Product Number

MT47H32M16


Actual product photos


MT47H32M16HR-25E G


Product Data Book:



For more product information, please download the PDF


Payment&Transportation


详情8.1


Official Certificate&Certificate



详情页3.1



Multiple product supply



详情5.1


Company office environment


详情6.1


Warehouse Real Shot


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Standard packaging


详情9


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