Product Descriptions

The IS66WVE2M16BLL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.

Product Features

 Asynchronous and page mode interface 

 Dual voltage rails for optional performance

 VDD 2.7V~3.6V, VDDQ 2.7V~3.6V

 Page mode read access

 Interpage Read access : 70ns

 Intrapage Read access : 20ns

 Low Power Consumption

 Asynchronous Operation < 30 mA

 Intrapage Read < 18mA

 Standby < 180 uA (max.) 

 Deep power-down (DPD) < 3uA (Typ)

 Low Power Feature

 Temperature Controlled Refresh

 Partial Array Refresh

 Deep power-down (DPD) mode

 Operating temperature Range 

Industrial -40°C~85°C

 Packages: 

48-ball TFBGA, 48-pin TSOP-I

Specifications

Actual product photos

Product Data Book：

For more product information, please download the PDF

Payment&Transportation

Official Certificate&Certificate

Multiple product supply

Company office environment

Warehouse Real Shot

Standard packaging

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