Product Details
| OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S16320B 3.3V 3.3V IS42S86400B 3.3V 3.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • Auto Refresh (CBR) • Self Refresh • 8K refresh cycles every 64 ms • Random column address every clock cycle • Programmable CAS latency (2, 3 clocks) • Burst read/write and burst read/single write operations capability • Burst termination by burst stop and precharge command • Available in 54-pin TSOP-II and 54-ball W-BGA (x16 only) • Operating Temperature Range: Commercial: 0°C to +70°C Industrial: -40°C to +85°C Automotive, A1: -40°C to +85°C |
Product Description
| Type | Description |
| ANSC PART# | ANSC- IS42S16320B-75ETLI |
| Category | Integrated Circuits (ICs) |
| Memory | |
| Memory | |
| Mfr | Original |
| Series | - |
| Packaging | Tray |
| Part Status | Obsolete |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 512Mbit |
| Memory Organization | 32M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 133 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 5.5 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 54-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 54-TSOP II |
| Base Product Number | IS42S16320 |
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