Product Benefits and Features
• High-performance read, program, and erase
– 106ns initial read access
– 108 MHz with zero wait-state synchronous burst reads: 7ns clock-to-data output
– 133 MHz with zero wait-state synchronous burst reads: 6ns clock-to-data output
– 8-, 16-, and continuous-word synchronous-burst reads
– Programmable WAIT configuration
– Customer-configurable output driver impedance
– Buffered programming: 2.0 μs/word (TYP), 512Mb
– Block erase: 0.9s per block (TYP)
– 20μs (TYP) program/erase suspend
• Architecture
– 16-bit wide data bus
– Multilevel cell technology
– Symmetrically-blocked array architecture
– 256KB erase blocks
– 1Gb device: Eight 128Mb partitions
– 512Mb device: Eight 64Mb partitions
– 256Mb device: Eight 32Mb partitions
– Status register for partition/device status
– Blank check feature
• Quality and reliability
– Automotive temperature: –40°C to +105°C (Grade 2 AEC-Q100)
– Minimum 100,000 ERASE cycles per block
– More than 20 years data retention
– 65nm process technology
• Power
– Core voltage: 1.7– 2.0V
– I/O voltage: 1.7–2.0V
– Standby current: 60μA (TYP) for 512Mb
– Automatic power savings mode
– 16-word synchronous-burst read current: 23mA (TYP) @ 108 MHz; 24mA (TYP) @ 133 MHz
• Software
– Micron® Flash data integrator (FDI) optimized
– Basic command set (BCS) and extended command set (ECS) compatible
– Common Flash interface (CFI) capable
• Security
– One-time programmable (OTP) space 64 unique factory device identifier bits 2112 user-programmable OTP bits
– Absolute write protection: VPP = GND
– Power-transition erase/program lockout
– Individual zero latency block locking
– Individual block lock-down
• Density and packaging
– 256Mb, 512Mb, and 1Gb
– Address-data multiplexed interface
– 64-Ball TBGA
Specifications
Attribute | Attribute value |
ANSM-Part# | ANSM-JS28F256P33B95 |
Category | Integrated Circuits (ICs) |
Memory | |
Memory | |
Mfr | Micron Technology Inc. |
Series | StrataFlash™ |
Package | Tray |
Product Status | Obsolete |
DigiKey Programmable | Not Verified |
Memory Type | Non-Volatile |
Memory Format | FLASH |
Technology | FLASH - NOR |
Memory Size | 256Mbit |
Memory Organization | 16M x 16 |
Memory Interface | Parallel |
Clock Frequency | 40 MHz |
Write Cycle Time - Word, Page | 95ns |
Access Time | 95 ns |
Voltage - Supply | 2.3V ~ 3.6V |
Operating Temperature | -40°C ~ 85°C (TC) |
Mounting Type | Surface Mount |
Package / Case | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package | 56-TSOP |
Base Product Number | JS28F256P33 |
Actual product photos
Product Data Book:
For more product information, please download the PDF
Payment&Transportation
Official Certificate&Certificate
Multiple product supply
Company office environment
Warehouse Real Shot
Standard packaging
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